Izixhobo ezisetyenzisiweyo zeSemiconductor Inkqubo yeElectroplating Raider® Edge ECD

Inkqubo ye-Applied Materials' Raider® Edge ECD imi njengomlinganiselo kwicandelo lokufakwa kwe-electrochemical (ECD) ngaphakathi kwemveliso ye-semiconductor. Ngenxa yokuhlanganiswa kwetekhnoloji emva kokufunyanwa kwe-Applied Materials ye-Semitool, le nkqubo isetyenziswa kakhulu kwiinkqubo zokudibanisa eziphambili zokupakisha kunye ne-wafer-level, ezahlulwe bukuguquguquka kwayo okuphezulu, ukukhupha okuphezulu, kunye nolawulo olugqwesileyo lwenkqubo.

**Ukubekwa Kwenkqubo**

**Inkampani:** Izinto ezisetyenzisiweyo, Inc.

**Imodeli yeMveliso:** Raider® Edge ECD

**Uhlobo lweZixhobo:** Inkqubo yokuHlanganisa iiElectrochemical eziZisebenzela ngokwazo ezinamaGumbi amaninzi

**Ukubaluleka Kwembali:** "Uphawu Loshishino" oludumileyo kwicandelo lobuchwepheshe bokugquma i-single-wafer. Lumele isizukulwana sesine sezixhobo ze-ECD ze-single-wafer; eyandulelayo, inkqubo ye-Raider GT, yayilungiselelwe ukuxhasa uphuhliso lwezizukulwana ezithathu zobuchwepheshe be-chip.

**Imigaqo-siseko**

Ukufakwa kwe-electrochemical kubandakanya ukusebenzisa umbane ukuze kuncitshiswe ii-ion zesinyithi kumphezulu we-wafer, ngaloo ndlela kudalwa ifilimu ethile encinci. Inkqubo ye-Raider Edge ECD idlula ngaphaya kokubeka izinto ngokulula; ngenkqubo yolawulo enobuchule, yenza le nkqubo ifikelele kwinqanaba le-athomu elichanekileyo. Ngaphezu koko, inkqubo ixhasa amanyathelo ahlukeneyo okucubungula amanzi, njengokugrumba kwe-wafer kunye nokucoca.

**Iimpawu kunye neenzuzo**

Amandla ayo awekho nje kuphela kubuchule bayo bokusingatha imisebenzi eqhelekileyo yokucwangcisa, kodwa okubaluleke ngakumbi kukuguquguquka kwayo okungaqhelekanga, ulawulo oluchanekileyo lwenkqubo, kunye noyilo oluzenzekelayo kakhulu.

**Impawu/Inzuzo** | **Inkcazo eneenkcukacha**

**Ukuguquguquka kweNkqubo** | Iyakwazi ukucubungula ubungakanani obahlukeneyo be-wafer, kuquka i-150mm, i-200mm, kunye ne-300mm; ixhasa ulandelelwano lwe-multi-step wet processing kwi-wafers, kuquka ukufakwa kwesinyithi, ukukrola, kunye nokucoca.

**Inkxaso yezinto eziBanzi** | Ixhasa ukufakwa kweendidi ezahlukeneyo zeesinyithi kunye nee-alloys, ezifana ne-copper, nickel, gold, tin-silver, magnetic alloys, kunye ne-gold-tin eutectic solders. Ikwaxhasa ukukrola i-multi-layer stack kwizixhobo ezikhethekileyo ezifana ne-CZT kunye ne-AlN.

**Ulawulo lweNkqubo oluPhambili** | Isebenzisa uluhlu lwe-anode oluneendawo ezininzi ukuze ifikelele kwi-plating efanayo, nokuba kwiileya zembewu ezibhityileyo kakhulu okanye ezithintelayo. Kwii-wafers ezingama-300mm, i-reactor yayo yegumbi ephuculweyo inokulungisa ngokuguquguqukayo uxinano lwangoku ukuqinisekisa ukufana kwe-deposition.

**Ukusebenza Okuphezulu kunye neendleko eziphantsi** | Ukuziqhelanisa ngokuchanekileyo kwe-"Teachless" kususa ixesha lokungasebenzi elinxulunyaniswa nokulungiswa ngesandla, ngelixa iteknoloji ye-ion membrane yandisa ubomi bokuhlamba ngamakhemikhali, nto leyo ebangela iindleko zokusebenza eziphantsi kakhulu. Ukongeza, indawo yayo encinci inyusa ngokufanelekileyo amandla emveliso iyonke. **Ukwandiswa koBuchule boBunini:** Inkqubo yangaphambili yeRaider GT, ixhase ukuya kuthi ga kwiigumbi ezintandathu zokuplata kwaye inikezela ngeemodyuli zokukhetha zokuqhoboshela okanye ze-metrology, kunye neegumbi ezidibeneyo zomphetho we-wafer, i-bevel, kunye nokucoca ngasemva.

**Iindawo zokufaka isicelo**

**Ukupakisha Okuphambili kunye neeNxibelelwano:** Isetyenziselwa ukuzalisa i-copper interconnect ekwenzeni ii-chip, ukuqinisekisa ukuzaliswa okungenamsebenzi; ikwasetyenziselwa ukubeka iintsika zobhedu, amaqhuma e-solder (kuquka i-lead-free solder), kunye nee-redistribution layers (RDL) kwi-wafer-level packaging.

**Ukwenziwa kweZixhobo eziKhethekileyo:** Isetyenziselwa ukufakwa kwesinyithi esineengqimba ezininzi kwizixhobo ezifana ne-MEMS kunye neesensa; ibonelela ngokuzaliswa kobhedu okusemgangathweni ophezulu kwi-TSVs (Through-Silicon Vias) kunye ne-TGVs (Through-Glass Vias).

**Ii-Power & Compound Semiconductors:** Zisetyenziselwa ukufaka ubhedu oluqinileyo kwizixhobo zamandla, kunye nokwenza i-metalization yangasemva ibe yi-low-stress kwi-wafers ezincinci.

**Ezinye Iinkqubo Ezikhethekileyo:** Iyakwazi ukufaka igolide ngee-liners okanye ii-wafers zeglasi zokucoca usebenzisa iikhompawundi ezisekwe kwi-ozone; inokwenza i-multi-layer stack etching—idlula amandla e-UBM (Under Bump Metallization) esiqhelo.

**Iinkcukacha zobugcisa**

**Inkxaso yobungakanani beWafer:** 150mm, 200mm, 300mm

**Inani leeModyuli zePlating:** Iimodeli zesiseko zixhasa iimodyuli ezininzi; iimodeli eziphezulu zinokuthwala ukuya kuthi ga kwi-6.

**Ukufana kwePlating:** Ikhokela kushishino (idatha ethile ayinikwanga).

**Izixhobo ezixhaswayo:** Cu (Copper), Au (Gold), SnAg (Tin-Silver), Ni (Nickel), magnetic alloys, AuSn (Gold-Tin Eutectic), njl.

**Amandla eNkqubo:** Ixhasa ukufakwa kobhedu olujiyileyo ukuya kuthi ga kwi-100µm, ukuzaliswa kwezakhiwo zeHigh Aspect Ratio (HAR), kunye nokuzaliswa kwamaqhuqhuva aneCritical Dimensions (CD) encinci kune-22nm.

**Inqanaba lokuZenzekela:** Uyilo oluzenzekelayo olusekelwe kwiigumbi ezininzi olusebenza ngokuzenzekelayo; luxhasa iiprotokholi zokuZenzekela zasefektri ezifana ne-SECS/GEM; ziyahambelana nee-SMIF kunye nee-FOUP wafer transfer pods.

Ukuthelekisa ne-ACM ULTRA ECP app-p

Njengomdlali ophambili kwicandelo lezixhobo zokugquma ze-semiconductor, le nkqubo ibekwe ngendlela eyahlukileyo kwi-ACM Research ULTRA ECP app-p—imodeli obuze ngayo ngaphambili. Ukukhetha phakathi kwezi zimbini ekugqibeleni kuxhomekeke kwiimfuno zakho zenkqubo ethile.

**Ubukhulu bokuthelekisa** | **Izinto ezisetyenzisiweyo iRaider Edge ECD** | **Uphando lwe-ACM ULTRA ECP ap-p**

**Iteknoloji Engundoqo** | Igxile ekufakeni iiplati ezichanekileyo kakhulu kwiiwafers ezingatshatanga | Iteknoloji yokupeyinta ethe tyaba yezixhobo ezikumgangatho wephaneli

**I-Substrate ekujoliswe kuyo** | Iiwafers eziyi-150mm – 300mm | Iiphaneli eziyi-510mm x 515mm

**Iingenelo eziPhambili** | Umlinganiselo weshishini; ukuvuthwa okuphezulu kwezobuchwepheshe; ifestile yenkqubo ebanzi | Izalisa umsantsa weshishini; ivumela ukuveliswa kobuninzi okungabizi kakhulu kwinqanaba lephaneli

**Ukugxila kwiNkqubo** | Igxininisa ukuhlanganiswa okungenamthungo neenkqubo zokudibanisa ezingaphambili | Yenzelwe ngokukodwa ukuPakisha iFan-Out Panel-Level (FOPLP)

Amandla okwenyani eRaider Edge ECD akwinguquko yayo: ekuqaleni yayiyiteknoloji esetyenziselwa ukunxibelelana kobhedu kwi-node ye-22nm, iguquke yaba liqonga eliguquguqukayo kakhulu elikwaziyo ukuxhasa uluhlu olubanzi lweenkqubo ezikhethekileyo—ukusuka kwizinto ezinomtsalane ukuya kwiipakeji eziphambili—ngaloo ndlela ibonisa ukuguquguquka kwayo okunzulu.