Mashiinka shiididda wafer-ka ee DISCO DFG8830

DISCO DFG8830 waa mashiin khafiifiya oo si buuxda otomaatig u ah oo loogu talagalay walxaha adag iyo kuwa jilicsan, oo ay soo saartay DISCO Corporation ee Japan. Diiradda ugu weyn waxay saaran tahay khafiifinta waxtarka leh, dhaawaca yar ee walxaha semiconductor/optic adkeysiga iyo kuwa jilicsan ee jiilka saddexaad sida SiC iyo sapphire. Iyada oo leh qaab-dhismeed 4-dhidib leh, 5-marxalad ah, waxay dheellitirtaa wax-soo-saarka sare iyo saxnaanta sare, taasoo ka dhigaysa mashiin caadi ah oo lagu khafiifiyo waferada adag iyo kuwa jilicsan ee 6-8 inji ah.

I. Meelaynta Aasaasiga ah iyo Xaaladaha Codsiga

1. Booska Muhiimka ah

Mashiin si buuxda u shaqeeya oo nadiifiya oo si gaar ah loogu talagalay adkeysiga sare, jajaban (SiC, safayr, dhoobada, galaaska, iwm.), kaas oo xallinaya dhibka ka dhasha hufnaanta farsamaynta oo hooseysa, burburka sare, iyo wax soo saar yar oo qalabka dhaqameed ah.

2. Codsiyada Caadiga ah

Semiconductors: Khafiifinta wafers-ka awoodda SiC/GaN (6-8 inji), khafiifinta substrate-ka safayr (jajabyada LED).

Optics-ka: Khafiifinta galaaska indhaha, walxaha dhoobada ah, iyo walxaha infrared-ka.

Baakad Sare: Khafiifinta waferada isku dhafan oo leh walxo taageero galaas/dhoobo ah (dhumucda guud ≤ 3.5mm).

3. Cabbirrada La jaanqaadaya

Waferada La farsameeyay: Φ4/5/6 inji (ugu badnaan Φ150mm).

Substrates-ka Taageera: Φ5/6/8 inji (oo la jaan qaadaya substrates-ka 8-inji ah ee taageeraya wafers-ka 6-inji ah).

II. Qaab-dhismeedka Guud iyo Qaab-dhismeedka Aasaasiga ah

1. Qaab-dhismeedka Guud

Qaab-dhismeedka: 4 wareeg oo leh wareegyo + 5 miisas oo leh jajab + 1 miis wareeg ah, oo isku daraya habka oo dhan ee rarista, shiididda, nadiifinta, qallajinta, iyo dejinta, oo haysta 3.5㎡ oo keliya, oo isku dhafan oo hufan.

Cabbirka (B×D×H): 1400×2500×2000mm; Miisaanka: Qiyaastii 6000kg.

2. Qaybaha Muhiimka ah

(1) Nidaamka Isbuunyada (4 dhidib, Z1-Z4)

Awoodda: Z1-Z3 waa 6.3kW (adag sare, xoog badan, oo ku habboon culaysyo culus oo saaran walxaha adag iyo kuwa jilicsan); Z4 waa dhidibka dhammaystirka. Xawaaraha wareegga: 1000-4000 daqiiqo⁻¹ (soo-saar koronto oo joogto ah, oo ku habboon shiidi qallafsan/khafiif ah).

Giraangiraha Shiidida: Giraangiraha dheemanka ee caadiga ah ee Φ300mm (dhexroor weyn, heerka ka saarista sare, oo ku habboon walxaha adag iyo kuwa jilicsan).

(2) Nidaamka Miiska Shaqada

5 miisas oo shaqo oo faakiyuum ah iyo 1 miis oo wareeg ah ayaa suurtogal ka dhigaya habaynta is barbar socda iyo hawlgal joogto ah, iyadoo leh UPH (awoodda sare saacaddii) saddex jeer ka badan qalabka hal-dhidibka ah (sida DFG8340).

Nuugista faakuumka + saxnaanta booska ± 2μm waxay hubineysaa in TTV (kala-goynta dhumucda guud) ee wafer-ka ka dib khafiifinta ay tahay ≤2μm.

(3) Nidaamka xakamaynta

Is-dhexgalka hawlgalka: GUI taabasho 15-inji ah, hawlgal ku salaysan astaanta, wuxuu taageeraa la socodka waqtiga-dhabta ah, kaydinta xuduudaha, iyo digniinaha aan caadiga ahayn.

Xudunta xakamaynta: Servo-saxsan oo sare + shabag xiran oo wareegsan, saxnaanta xakamaynta dhumucduna waa ±0.1μm, waxay taageertaa khafiifinta heerka micron-ka (hoos u dhac ilaa 50μm). 3. Modules-yada Muhiimka ah

Module Shiididda: Qayb 4-dhidib ah oo shaqada ah (Z1 shiididda qallafsan → Z2 shiididda dhexdhexaadka ah → Z3 shiididda fiican → Z4 dhalaalinta/dhammaystirka), dhammaystirka habab badan oo hal xidhmo ah, taasoo yaraynaysa dhaawaca maaraynta.

Module Nadiifin iyo Qallajin: Biyo saafi ah oo lagu buufiyo + qalajinta hawada ion ka dib marka la shiido, iyadoo aan wax haraag ah ama calaamad biyood ah laga tegin, iyadoo la buuxinayo shuruudaha nadaafadda semiconductor-ka.

Soo rarista iyo Soo dejinta Tooska ah: Sanduuqyo laba-geesood ah (25 wafers sanduuqkiiba), si toos ah u aqoonsanaya wafers/substrates, taasoo yaraynaysa faragelinta gacanta.

III. Mabda'a Shaqada iyo Socodka Habka

1. Mabda'a Shiidida

Waxay isticmaashaa habka shiididda wafer-ka + habka shiididda ee quudinta: Wafer-ku wuxuu ku wareegaa xawaare sare miiska shaqada, giraangiraha shiididda dheemankuna si xawli ah ayuu u quudiyaa, isagoo ka saaraya walxaha iyada oo loo marayo jarista xoqidda + jajab yar. Agabka adag iyo kuwa jilicsan, ka saarista jajabku waa habka ugu muhiimsan, oo lagu kabo ka saarista balaastikada, iyadoo la xakameynayo qoto dheer ee dildilaaca ≤5μm.

2. Socodka Habka Caadiga ah

Rarista: Gacan robot ah ayaa ka soo qaadaysa wafer-ka sanduuqa agabka → waxay dhigaysaa → faakiyuumku wuxuu ku nuugayaa miiska shaqada.

Shiidida Qalafsan (Z1): Heerka sare ee saarista (50-100μm/daqiiqo), si dhakhso ah u khafiifiya ilaa dhumucda bartilmaameedka + 20μm.

Shiidi Dhexdhexaad ah (Z2): Heerka ka saarista dhexdhexaadka ah (20-50μm/daqiiqo), taasoo yareynaysa lakabka dhaawacan ilaa dhumucda bartilmaameedka + 5μm.

Shiidi Fiican (Z3): Heerka saarista oo hooseeya (5-10μm/daqiiqo), TTV ≤ 2μm, lakabka dhaawacan ≤ 2μm.

Nadiifinta/Dhammaystirka Dusha Sare (Z4): Muraayadda dhammaystiran, qallafsanaanta dusha sare Ra ≤ 0.1μm.

Nadiifinta iyo Qallajinta: Buufin biyo saafi ah → qalajinta hawada ion → dejinta sanduuqa agabka.

3. Taageer Socodka Habaynta Substrate-ka: Waxay la qabsataa wafers-ka isku-dhafan ee galaaska/dhoobada (dhumucda guud ≤ 3.5mm), nuugista faakiyuumka ee substrate-ka waxay ilaalisaa dhinaca hore ee wafer-ka, iyadoo shiidi doonta oo keliya dhinaca dambe, xallinta dhibaatooyinka qallooca iyo jabka ee wafer-ka aadka u khafiifsan.

IV. Faa'iidooyinka Tiknoolajiyada ee Muhiimka ah

1. La qabsi xooggan oo loogu talagalay agabka adag iyo kuwa jilicsan

Isgoyska awoodda sare leh (6.3kW) + giraangiraha dheemanka dhexroorka weyn leh, kordhinta hufnaanta habaynta SiC/sapphire 3 jeer iyo kordhinta cimriga giraangiraha 50%.

Habka shiididda dhaawaca yar: Lakabka dhaawaca ≤2μm, wax soo saar ≥99%, oo aad uga badan hababka duubista dhaqameed.

2. Awoodda wax soo saarka waxtarka sare leh (4 dhidib, 5 jadwal shaqo)

Habaynta is barbar socota: 4 dhidib oo isku mar shaqeeya, 5 jadwal shaqo oo si joogto ah u wareegaya, UPH≥30 wafers (6-inch SiC), 3 jeer ka badan qalabka hal-dhidibka ah.

Si buuxda u otomaatig ah: Rarista isku dhafan, dejinta, shiididda, nadiifinta, iyo qallajinta; hawlgal joogto ah oo aan la ilaalin muddo 24 saacadood ah.

3. Saxnaan sare iyo xasillooni sare

Xakamaynta dhumucda: ±0.1μm, TTV≤2μm, oo buuxinaysa shuruudaha wafer-ka SiC ee heerka baabuurta.

Qaab-dhismeedka adag: Jirka birta la shubay + naqshadaynta gariirka, gariirka ≤0.5μm, saxnaan la'aan inta lagu jiro hawlgalka muddada dheer. 4. La qabsiga Dabacsan iyo Kharashyada Hawlgalka oo Yar

Iswaafajinta Cabbirka Badan: Waxay la jaanqaadi kartaa wafer-ka 6-inji ah iyo substrate-ka 8-inji ah, taasoo u oggolaanaysa isticmaalka ujeeddooyin badan iyo yaraynta maalgashiga qalabka.

Habaynta Cagaaran: Waxay isticmaashaa oo keliya biyo saafi ah, iyadoo meesha ka saaraysa wasakhaynta wasakhda wasakhda; biyaha wasakhda ah si toos ah ayaa loo sii deyn karaa, taasoo yareynaysa kharashyada hawlgalka 30%.

V. Shaxda Halbeegyada Farsamada ee Muhiimka ah

Qiimaha Halbeegga Shaxda

Cabbirka Wafer-ka ee Habaynta Φ4/5/6 inji (ugu badnaan Φ150mm)

Cabbirka Substrate-ka Taageerada Φ5/6/8 inji

Tirada Spindles / Power 4 dhidib, Z1-Z3: 6.3kW

Xawaaraha Isbuunyada 1000-4000 daqiiqo⁻¹

Tilmaamaha Taayirada Shiidida Φ300mm Giraangiraha Shiidida Dheemanka

Saxnaanta Xakamaynta Dhumucda ±0.1μm

TTV (Wadarta Kala Duwanaanta Dhumucda) ≤2μm

Dusha sare ee qallafsanaanta Ra≤0.1μm

Awoodda (6-inji SiC) UPH≥30 wafers

Cabbirka Guud ee Mashiinka (Qaybta × D × H) 1400 × 2500 × 2000mm

Miisaanka Qiyaastii 6000kg

Bedka dabaqa 3.5㎡

VI. Isbarbardhigga Qalabka La Midka ah (DFG8830 vs DFG8340)

Isbarbardhigga Shaxda Shayga DFG8830 (4 dhidib, 5 jadwal shaqo) DFG8340 (1-dhidib, 2-marxalad)

Qaabeynta isbaarada: 4×6.3kW, qaybin qallafsan/dhammaystiran/nadiifinta: 1×4.2kW, hal hab

Awoodda: UPH≥30 wafers (6-inch SiC), UPH≤10 wafers (6-inch SiC)

Saxnaanta habaynta: TTV≤2μm, lakabka dhaawaca≤2μm, TTV≤5μm, lakabka dhaawaca≤5μm

Alaab ku habboon: SiC, safayr, wafer isku dhafan (oo leh substrate), wafer silikoon ah, dhoobada adag oo hooseeya

Dhaxalka: 3.5㎡, 2㎡

Xaaladaha la dabaqi karo: Wax soo saar badan, adkaysi sare iyo walxo jajaban; Dufcad yar, wafer silicon ah/qalab adag oo hooseeya

VII. Soo Koobid iyo Qiimaha Warshadaha

DISCO DFG8830, oo leh qaab-dhismeedkeeda 4-dhidib leh, 5-marxalad ah, isgoys awood sare leh, iyo habka dhaawaca yar, ayaa noqday qalab halbeeg u ah khafiifinta semiconductors-ka jiilka saddexaad (SiC/GaN) iyo substrate-ka indhaha ee safayr, taasoo xallisa dhibaatooyinka warshadaha ee hufnaanta hoose, dhaawaca sare, iyo wax-soo-saarka hooseeya ee farsamaynta agabka adag iyo kuwa jilicsan. Meelaha sida baabuurta tamarta cusub, isgaarsiinta 5G, iyo nalalka LED, DFG8830 waxay ka caawisaa aaladaha korontada SiC iyo jajabyada LED ee safayr inay gaaraan wax soo saar ballaaran, iyagoo warshadaha semiconductor-ka u horseedaya bandgap ballaaran, astaamo khafiif ah, iyo waxqabad sare.