DISCO DFG8830 ekyuma ekikuba wafer

DISCO DFG8830 kyuma kya otomatiki ekigonza n’okusiimuula ebintu ebikalu n’ebimenyamenya, ekyatongozebwa ekitongole kya DISCO Corporation of Japan. Essira lyayo ery’omusingi liri ku kugonza okulungi, okw’okwonooneka okutono okw’ebintu eby’omulembe ogw’okusatu ebya semiconductor/optical hard and brittle nga SiC ne sapphire. Eriko enzimba ya 4-axis, 5-stage architecture, ekwataganya obusobozi obw’amaanyi n’obutuufu obw’amaanyi, ekigifuula ekyuma ekikulu eky’okugonza wafers enkalu ne brittle eza yinsi 6-8.

I. Ensonga enkulu ez’okuteeka ebifo n’okukozesa

1. Okuteeka mu kifo ekikulu

Ekyuma ekirongoosa n’okugonza ekikola mu bujjuvu ekyakolebwa mu ngeri ey’enjawulo ku bintu ebikaluba ennyo, ebikutuka ennyo (SiC, safiro, seramiki, endabirwamu, n’ebirala), ekigonjoola ensonga z’obulumi ez’obulungi bw’okulongoosa obutono, okwonooneka okw’amaanyi, n’amakungula amatono ag’ebyuma eby’ennono.

2. Enkozesa eya bulijjo

Semiconductors: Okugonza SiC/GaN power wafers (yinsi 6-8), okugonza ebitundu bya safiro (LED chips).

Optics: Okugonza endabirwamu ezirabika, ebintu ebikolebwa mu seramiki, n’ebintu ebiyitibwa infrared.

Okupakinga okw’omulembe: Okugonza wafers ezikoleddwa mu bikozesebwa n’ebintu ebiwanirira endabirwamu/seramiki (obugumu bwonna awamu ≤ 3.5mm).

3. Sayizi ezikwatagana

Wafers ezirongooseddwa: Φ4/5/6 yinsi (ekisinga obunene Φ150mm).

Substrates eziwanirira: Φ5/6/8 inches (zikwatagana ne substrates za yinsi 8 eziwanirira wafers za yinsi 6).

II. Enzimba okutwaliza awamu n’okusengeka emisingi

1. Okuzimba okutwaliza awamu

Ensengeka: 4 spindles + 5 chuck tables + 1 rotary table, okugatta enkola yonna ey'okutikka, okusena, okuyonja, okukala, n'okutikkula, okutwala 3.5M zokka, compact era efficient.

Ebipimo (Obugazi × Obugazi × Obugulumivu): 1400 × 2500 × 2000mm; Obuzito: Nga 6000kg.

2. Ebitundu Ebikulu

(1) Enkola ya Spindle (embazzi 4, Z1-Z4) .

Amaanyi: Z1-Z3 ziri 6.3kW (obukakanyavu bwa waggulu, torque ya waggulu, zisaanira emigugu emizito ku bintu ebikalu n’ebimenyamenya); Z4 ye ekisiki ekimaliriza. Sipiidi y’okuzimbulukuka: 1000-4000 min−1 (amaanyi agafuluma buli kiseera, agasaanira okusena okukaluba/okulungi).

Namuziga y’okusena: Namuziga y’okusena dayimanda eya Φ300mm eya mutindo (diameter ennene, omutindo gw’okuggyawo ogw’amaanyi, esaanira ebintu ebikalu n’ebimenyamenya).

(2) Enkola y’emmeeza y’emirimu

5 vacuum suction cup worktables ne 1 rotary table zisobozesa okukola parallel processing n’okukola obutasalako, nga UPH (obusobozi obw’okungulu buli ssaawa) emirundi esatu okusinga ku byuma bya single-axis (nga DFG8340).

Vacuum adsorption + positioning accuracy ±2μm ekakasa nti TTV (total thickness deviation) ya wafer oluvannyuma lw’okugonza eri ≤2μm.

(3) Enkola y’okufuga

Enkola y’emirimu: touch GUI ya yinsi 15, ekola eyesigamiziddwa ku bifaananyi, ewagira okulondoola mu kiseera ekituufu, okutereka parameter, ne alamu ezitali za bulijjo.

Control core: High-precision servo + grating closed-loop, obuwanvu okufuga obutuufu ±0.1μm, awagira micron-level okugonza (okukka ku 50μm). 3. Module Ebikulu

Module y’okusiiga: okugabanya emirimu mu bitundu 4 (Z1 rough grinding → Z2 medium grinding → Z3 fine grinding → Z4 polishing/finishing), okumaliriza enkola eziwera mu clamping emu, okukendeeza ku kwonooneka mu kukwata.

Module y’okuyonja n’okukaza: Okufuuyira amazzi amayonjo + okukala empewo ya ion oluvannyuma lw’okusena, nga tolekawo bisigalira oba obubonero bw’amazzi, okutuukiriza ebisaanyizo by’obuyonjo bwa semiconductor.

Okutikka n’okutikkula mu ngeri ey’otoma: Bokisi z’ebintu bibiri (wafers 25 buli bbokisi), ezizuula wafers/substrates mu ngeri ey’otoma, ekikendeeza ku kuyingirira mu ngalo.

III. Enkola y’emirimu n’Entambula y’enkola

1. Omusingi gw’okusena

Ekozesa enkola ya wafer rotation + in-feed grinding: Wafer ekyukakyuka ku sipiidi ya waggulu n’emmeeza y’okukolerako, era nnamuziga esiiga dayimanda eliisa mu axially, ng’eggyawo ebintu okuyita mu abrasive cutting + micro-fracture. Ku bintu ebikalu n’ebimenyamenya, okuggyawo enjatika y’enkola enkulu, nga kwongerwako okuggyawo obuveera, okufuga obuziba bw’enjatika ≤5μm.

2. Entambula y’enkola eya mutindo

Okutikka: Omukono gwa roboti gusitula wafer okuva mu bbokisi y’ebintu → gugiteeka → vacuum gugiyingiza ku worktable.

Coarse Grinding (Z1): Omuwendo gw’okuggyawo ogw’amaanyi (50-100μm/min), okugonza amangu okutuuka ku buwanvu bw’ekigendererwa + 20μm.

Medium Grinding (Z2): Omuwendo gw’okuggyawo ogwa wakati (20-50μm/min), okukendeeza ku layeri eyonoonese okutuuka ku buwanvu bw’ekigendererwa + 5μm.

Fine Grinding (Z3): Omuwendo omutono ogw’okuggyawo (5-10μm/min), TTV ≤ 2μm, layeri eyonoonese ≤ 2μm.

Okusiimuula/Okumaliriza kungulu (Z4): Okumaliriza endabirwamu, obukaluba bw’okungulu Ra ≤ 0.1μm.

Okwoza n’okukala: Okufuuyira amazzi amayonjo → okukala empewo ya ion → okutikkula mu bbokisi y’ebintu.

3. Support Substrate Processing Flow: Ekwatagana ne glass/ceramic substrate composite wafers (total thickness ≤ 3.5mm), vacuum adsorption ya substrate ekuuma oludda lw’omu maaso olwa wafer, okusena oludda lw’emabega lwokka, okugonjoola ebizibu by’okuwuguka n’okumenya kwa wafers ezigonvu ennyo.

IV. Ebirungi Ebikulu mu Tekinologiya

1. Okukwatagana okw’amaanyi n’ebintu ebikalu n’ebimenyamenya

Spindle ey’amaanyi amangi (6.3kW) + nnamuziga esenya dayimanda eya dayamita ennene, okwongera ku SiC/sapphire processing efficiency emirundi 3 n’okwongera ku bulamu bwa nnamuziga ebitundu 50%.

Enkola y’okusena ey’okwonooneka okutono: Layer y’okwonooneka ≤2μm, amakungula ≥99%, esukkulumye nnyo ku nkola z’okusiiga ez’ennono.

2. Obusobozi bw’okufulumya obulungi ennyo (embazzi 4, emmeeza z’emirimu 5) .

Okukola mu ngeri ey’okukwatagana: embazzi 4 ezikola omulundi gumu, emmeeza 5 ezikola nga zikyukakyuka obutasalako, UPH≥30 wafers (6-inch SiC), emirundi 3 egy’ebyuma ebirina ekisiki kimu.

Fully automated: Okutikka, okutikkula, okusena, okuyonja, n’okukala okugatta; okukola obutasalako awatali kulabirirwa okumala essaawa 24.

3. Obutuufu obw’amaanyi n’obutebenkevu obw’amaanyi

Okufuga obuwanvu: ±0.1μm, TTV≤2μm, okutuukiriza ebyetaago bya SiC wafer eby’omutindo gw’emmotoka.

Enzimba enkalu: Omubiri gw’ekyuma ekisuuliddwa + dizayini y’okukendeeza ku kukankana, okukankana ≤0.5μm, tewali kuwuguka mu butuufu mu kiseera ky’okukola okumala ebbanga eddene. 4. Okukyukakyuka okukyukakyuka n’ebisale ebitono eby’emirimu

Okukwatagana kwa sayizi eziwera: Ekwatagana ne wafers za yinsi 6 ne substrates za yinsi 8, kisobozesa okukozesa emirimu mingi n’okukendeeza ku nsimbi eziteekebwa mu byuma.

Green Processing: Ekozesa amazzi amayonjo gokka, okumalawo obucaafu obuva mu polishing slurry; amazzi amakyafu gasobola okufulumizibwa butereevu, ekikendeeza ku nsaasaanya y’emirimu ebitundu 30%.

V. Omulongooti gw’ebipimo by’ebyekikugu ebikulu

Omuwendo gwa Parameter y’Emmeeza

Okukola Wafer Sayizi Φ4/5/6 yinsi (ekisinga obunene Φ150mm)

Okuwagira Substrate Sayizi Φ5/6/8 yinsi

Omuwendo gwa Spindles / Amaanyi 4 axes, Z1-Z3: 6.3kW

Sipiidi ya Spindle 1000-4000min−1

Okusena Namuziga Specification Φ300mm Dayimanda Okusena Namuziga

Obutuufu bw’okufuga obugumu ±0.1μm

TTV (Okukyama kw’obugumu bwonna) ≤2μm

Obukaluba bw’okungulu Ra≤0.1μm

Obusobozi (siC ya yinsi 6) UPH≥30 wafers

Okutwalira awamu Ebipimo by’Ekyuma (W×D×H) 1400×2500×2000mm

Obuzito Nga. kkiro 6000

Obuwanvu bw’omwaliiro 3.5m2

VI. Okugerageranya n'Ebyuma Ebifaanagana (DFG8830 vs DFG8340)

Ekintu eky’okugeraageranya emmeeza DFG8830 (ekisiki 4, emmeeza 5 ez’okukoleramu) DFG8340 (ekisiki 1, emitendera 2)

Ensengeka ya spindle: 4 × 6.3kW, roughing / okumaliriza / polishing okugabanya: 1 × 4.2kW, enkola emu

Obusobozi: Wafers za UPH≥30 (SiC ya yinsi 6), wafers za UPH≤10 (SiC ya yinsi 6)

Obutuufu bw’okukola: TTV≤2μm, layeri ey’okwonooneka≤2μm, TTV≤5μm, layeri ey’okwonooneka≤5μm

Ebintu ebisaanira: SiC, safiro, wafers ezikoleddwa mu bikozesebwa (nga zirina substrate), wafers za silicon, ceramics ezikaluba ennyo

Omusika: 3.5m2, 2m2

Ensonga ezikozesebwa: Ebintu ebikolebwa mu bungi, ebikaluba ennyo n’ebimenyamenya; Batch entono, silicon wafers/ebintu ebikaluba ebitono

VII. Mu bufunze n’omuwendo gw’amakolero

DISCO DFG8830, n’enzimba yaayo eya 4-axis, 5-stage architecture, high-power spindle, n’enkola ey’okwonooneka okutono, efuuse ekyuma ekipimo eky’okugonza semiconductors ez’omulembe ogw’okusatu (SiC/GaN) ne sapphire optical substrates, okugonjoola ensonga z’obulumi mu makolero ez’obulungi obutono, okwonooneka okw’amaanyi, n’amakungula amatono mu kulongoosa ebintu ebikalu n’ebizibu. Mu bintu nga mmotoka empya ez’amaanyi, empuliziganya ya 5G, n’amataala ga LED, DFG8830 eyamba ebyuma ebikola amaanyi ga SiC ne chips za safiro LED okutuuka ku kukola mu bungi, ekivuga amakolero ga semiconductor okutuuka ku bandgap egazi, profiles ennyimpi, n’omutindo ogwa waggulu.