Isixhobo sokugaya i-wafer seDISCO DFG8830

I-DISCO DFG8830 ngumatshini wokucutha nokupolisha ozenzekelayo ngokupheleleyo wezinto eziqinileyo nezibuthathaka, owasungulwa yi-DISCO Corporation yaseJapan. Ingqwalasela yayo ephambili kukucutha okusebenzayo, okungonakalisi kakhulu kwezixhobo zesizukulwana sesithathu ze-semiconductor/optical hard and brittle ezifana ne-SiC kunye ne-sapphire. Ibandakanya uyilo lwe-4-axis, olunezigaba ezi-5, ilungelelanisa ukusebenza okuphezulu kunye nokuchaneka okuphezulu, okwenza ukuba ibe ngumatshini oqhelekileyo wokucutha ii-wafers eziqinileyo nezibuthathaka ezingama-intshi ayi-6-8.

I. Iimeko zokubeka indawo ephambili kunye nezicelo

1. Indawo engundoqo

Umatshini wokupolisha nowokuncitshisa ozenzekelayo ngokupheleleyo owenzelwe ngokukodwa izinto eziqinileyo nezithambileyo (iSiC, isafire, iseramikhi, iglasi, njl.njl.), osombulula iindawo ezibuhlungu zokusebenza okuphantsi, umonakalo omkhulu, kunye nokuvelisa izixhobo zemveli okuncinci.

2. Izicelo eziqhelekileyo

IiSemiconductors: Ukuncitshiswa kwee-wafers zamandla zeSiC/GaN (ii-intshi ezi-6-8), ukuncitshiswa kwee-substrates zesafire (iitships ze-LED).

I-Optics: Ukuncitshiswa kweglasi ye-optical, i-ceramic substrates, kunye nezinto ze-infrared.

Ukupakisha Okuphambili: Ukuncitshiswa kwee-wafers ezidityanisiweyo ngee-substrates zenkxaso yeglasi/ye-ceramic (ubukhulu obupheleleyo ≤ 3.5mm).

3. Ubungakanani obuhambelanayo

IiWafers ezicutshungulweyo: Φ4/5/6 intshi (ubuninzi Φ150mm).

Ii-Substrates ezixhasayo: Φ5/6/8 intshi (ziyahambelana nee-substrates eziyi-8 intshi ezixhasa ii-wafers eziyi-6 intshi).

II. Ulwakhiwo olupheleleyo kunye noCwangciso oluPhambili

1. Uyilo olupheleleyo

Uyilo: iispindles ezi-4 + iitafile ezi-5 zechuck + itafile e-1 ejikelezayo, edibanisa yonke inkqubo yokulayisha, ukugaya, ukucoca, ukomisa, kunye nokukhupha impahla, ithatha i-3.5㎡ kuphela, incinci kwaye isebenza kakuhle.

Ubukhulu (Ububanzi × Ububanzi): 1400 × 2500 × 2000mm; Ubunzima: Malunga ne-6000kg.

2. Izinto eziphambili

(1) Inkqubo yeSpindle (ii-axes ezi-4, i-Z1-Z4)

Amandla: I-Z1-Z3 yi-6.3kW (ukuqina okuphezulu, i-torque ephezulu, ifanelekile kwimithwalo enzima kwizinto ezinzima nezibuthathaka); I-Z4 yi-axis yokugqiba. Isantya sokujikeleza: 1000-4000 min⁻¹ (ukuphuma kwamandla rhoqo, ifanelekile ekugayweni okurhabaxa/okucolekileyo).

Ivili lokusila: Ivili lokusila eliqhelekileyo ledayimani le-Φ300mm (ububanzi obukhulu, izinga lokususa eliphezulu, lifanelekile kwizinto eziqinileyo neziqhekekayo).

(2) Inkqubo yetafile yokusebenza

Iitafile zokusebenzela ezi-5 zekomityi yokufunxa i-vacuum kunye netafile e-1 ejikelezayo zivumela ukucutshungulwa ngaxeshanye kunye nokusebenza okuqhubekayo, nge-UPH (umthamo ophezulu ngeyure) ephindwe kathathu kunezixhobo ze-single-axis (ezifana ne-DFG8340).

Ukufunxwa kwe-vacuum + ukuchaneka kokubekwa ±2μm kuqinisekisa ukuba i-TTV (ukuphambuka kobukhulu obupheleleyo) ye-wafer emva kokuncipha yi-≤2μm.

(3) Inkqubo yokulawula

I-interface yokusebenza: I-GUI yokuchukumisa eyi-intshi ezili-15, ukusebenza okusekwe kwi-icon, ixhasa ukujonga ngexesha langempela, ukugcinwa kweeparameter, kunye nee-alamu ezingaqhelekanga.

Umongo wolawulo: I-servo echanekileyo kakhulu + i-grating closed-loop, ukuchaneka kolawulo lobukhulu ±0.1μm, ixhasa ukunciphisa i-micron-level (ukuya kuthi ga kwi-50μm). 3. IiModyuli eziPhambili

Imodyuli Yokugaya: Ulwahlulo lwabasebenzi olune-axis ezi-4 (ukugaya okurhabaxa kwe-Z1 → ukugaya okuphakathi kwe-Z2 → ukugaya okucolekileyo kwe-Z3 → ukupolisha/ukugqiba kwe-Z4), kugqiba iinkqubo ezininzi ngokucinezela okukodwa, kunciphisa umonakalo wokuphatha.

Imodyuli yokucoca nokomisa: Ukutshiza ngamanzi acocekileyo + ukomisa umoya we-ion emva kokugaywa, kungashiyi ntsalela okanye amabala e-watermark, ukuhlangabezana neemfuno zokucoceka kwe-semiconductor.

Ukulayisha Nokuthulula Ngokuzenzekelayo: Iibhokisi zezinto ezimbini (ii-wafer ezingama-25 kwibhokisi nganye), ezichonga ngokuzenzekelayo ii-wafer/ii-substrate, zinciphisa ukungenelela ngesandla.

III. Umgaqo-nkqubo Wokusebenza kunye Nokuhamba Kweenkqubo

1. Umgaqo Wokugaya

Isebenzisa indlela yokujikeleza i-wafer + indlela yokugaya ngaphakathi kokutya: I-wafer ijikeleza ngesantya esiphezulu kunye netafile yokusebenza, kwaye ivili lokugaya ledayimani litya ngokwe-axial, lisusa izinto ngokusika okurhabaxa + ukwaphuka okuncinci. Kwizinto eziqinileyo neziqhekekileyo, ukususa okuqhekekileyo yindlela ephambili, encediswa kukususwa kweplastiki, ukulawula ubunzulu bokuqhekeka ≤5μm.

2. Ukuhamba kweNkqubo eQhelekileyo

Ukulayisha: Ingalo yerobhothi ithatha i-wafer kwibhokisi yezinto eziphathekayo → iyibeka endaweni yayo → i-vacuum iyifunxa kwitafile yokusebenza.

Ukusila Okurhabaxa (Z1): Izinga eliphezulu lokususa (50-100μm/min), lincipha ngokukhawuleza ukuya kubukhulu obujoliswe kubo + 20μm.

Ukusila Okuphakathi (Z2): Izinga lokususa eliphakathi (20-50μm/min), kunciphisa umaleko owonakeleyo ukuya kubukhulu obujoliswe kuwo + 5μm.

Ukusila Okucolekileyo (Z3): Izinga lokususa eliphantsi (5-10μm/min), i-TTV ≤ 2μm, umaleko owonakeleyo ≤ 2μm.

Ukupholisha/Ukugqiba Umphezulu (Z4): Ukugqitywa kwesipili, uburhabaxa bomphezulu Ra ≤ 0.1μm.

Ukucoca kunye nokomisa: Ukutshiza ngamanzi acocekileyo → ukomisa ngomoya we-ion → ukukhupha izinto kwibhokisi yezinto.

3. Inkxaso yoKusebenza kweSubstrate: Ihambelana nee-wafers zeglasi/ze-ceramic substrate ezidityanisiweyo (ubukhulu obupheleleyo ≤ 3.5mm), ukufunxwa kwe-vacuum substrate kukhusela icala elingaphambili le-wafer, kugaywa kuphela icala elingasemva, kusonjululwa iingxaki zokugoba nokuqhekeka kwee-wafers ezibhityileyo kakhulu.

IV. Iingenelo zeTekhnoloji eziPhambili

1. Ukuziqhelanisa Okuqinileyo Nezinto Eziqinileyo Nezithambileyo

I-spindle enamandla aphezulu (6.3kW) + ivili lokugaya ledayimani elikhulu, oko kwandisa ukusebenza kakuhle kokucubungula i-SiC/sapphire ngokuphindwe kathathu kwaye kwandise ubomi bevili nge-50%.

Inkqubo yokusila engenamonakalo uphezulu: Umaleko womonakalo ≤2μm, isivuno ≥99%, udlula kakhulu iinkqubo zesiqhelo zokuleqa.

2. Umthamo wemveliso osebenza kakuhle kakhulu (ii-axes ezi-4, iitafile zomsebenzi ezi-5)

Ukucubungula ngaxeshanye: ii-axes ezi-4 ezisebenza ngaxeshanye, iitafile zokusebenza ezi-5 ezijikelezayo rhoqo, ii-wafers ze-UPH≥30 (ii-intshi ezi-6 ze-SiC), eziphindwe kathathu kunezixhobo ze-single-axis.

Okuzenzakalelayo ngokupheleleyo: Ukulayisha, ukukhupha izinto, ukugaya, ukucoca, kunye nokomisa okudibeneyo; ukusebenza okungacwangciswanga rhoqo iiyure ezingama-24.

3. Ukuchaneka okuphezulu kunye nozinzo oluphezulu

Ulawulo lobukhulu: ± 0.1μm, TTV≤2μm, ihlangabezana neemfuno ze-wafer ye-SiC ye-automotive-grade.

Ulwakhiwo oluqinileyo: Umzimba wesinyithi otyhidiweyo + uyilo lokudambisa ukungcangcazela, ukungcangcazela ≤0.5μm, akukho kushukuma ngokuchanekileyo ngexesha lokusebenza ixesha elide. 4. Ukuguquguquka okuguquguqukayo kunye neendleko zokusebenza eziphantsi

Ukuhambelana kobukhulu obuninzi: Iyahambelana nee-wafers ezi-intshi ezi-6 kunye nee-substrates ezi-intshi ezi-8, okuvumela ukusetyenziswa kweenjongo ezininzi kunye nokunciphisa utyalo-mali kwizixhobo.

Ukucubungula Okuluhlaza: Kusebenzisa amanzi acocekileyo kuphela, kususa ungcoliseko lokupholisha; amanzi amdaka anokukhutshwa ngqo, okunciphisa iindleko zokusebenza ngama-30%.

V. Itheyibhile yeeParamitha zobuGcisa eziPhambili

Ixabiso leParamitha yeTheyibhile

Ubungakanani beWafer yokucubungula Φ4/5/6 intshi (ubuninzi Φ150mm)

Inkxaso yobungakanani be-substrate Φ5/6/8 intshi

Inani leeSpindles / Amandla 4 axes, Z1-Z3: 6.3kW

Isantya seSpindle 1000-4000min⁻¹

Inkcazelo yevili lokuGrila i-Φ300mm Diamond Grinding Wheel

Ukuchaneka koLawulo lokutyeba ± 0.1μm

I-TTV (Ukuphambuka koBukhulu obupheleleyo) ≤2μm

Uburhabaxa bomphezulu Ra≤0.1μm

Umthamo (ii-intshi ezi-6 zeSiC) ii-wafers ze-UPH≥30

Ubukhulu boMatshini ngokubanzi (W×D×H) 1400×2500×2000mm

Ubunzima obumalunga ne-6000kg

Indawo yoMgangatho 3.5㎡

VI. Uthelekiso nezixhobo ezifanayo (DFG8830 vs DFG8340)

Itheyibhile yokuthelekisa into DFG8830 (ii-axes ezi-4, iitafile zomsebenzi ezi-5) DFG8340 (i-axis e-1, inqanaba eli-2)

Uqwalaselo lwe-Spindle: 4×6.3kW, ulwahlulo lwe-roughing/finishing/polish: 1×4.2kW, inkqubo enye

Umthamo: Iiwafers ze-UPH≥30 (ii-intshi ezi-6 zeSiC), iiwafers ze-UPH≤10 (ii-intshi ezi-6 zeSiC)

Ukuchaneka kokucubungula: TTV≤2μm, umaleko womonakalo≤2μm, TTV≤5μm, umaleko womonakalo≤5μm

Izixhobo ezifanelekileyo: iSiC, isafire, ii-wafers ezidityanisiweyo (ezine-substrate), ii-wafers ze-silicon, iiseramikhi ezilukhuni kancinci

Ilifa: 3.5㎡, 2㎡

Iimeko ezifanelekileyo: Imveliso enkulu, izinto eziqinileyo nezibuthathaka; Ii-wafers ze-silicon ezincinci/izinto eziqinileyo

VII. Isishwankathelo kunye nexabiso leShishini

I-DISCO DFG8830, enoyilo lwayo olune-axis ezi-4, i-5-stage, i-spindle enamandla aphezulu, kunye nenkqubo yokonakala okuncinci, iye yaba sisixhobo sokulinganisa sokunciphisa ii-semiconductors zesizukulwana sesithathu (i-SiC/GaN) kunye ne-sapphire optical substrates, isombulula iindawo ezibuhlungu zoshishino zokusebenza okuphantsi, umonakalo omkhulu, kunye nemveliso ephantsi ekucutshungulweni kwezinto eziqinileyo nezibuthathaka. Kwimimandla efana nezithuthi zamandla amatsha, unxibelelwano lwe-5G, kunye nokukhanya kwe-LED, i-DFG8830 inceda izixhobo zamandla ze-SiC kunye neetships ze-sapphire LED ukufezekisa imveliso enkulu, iqhubela ishishini le-semiconductor kwi-bandgap ebanzi, iiprofayili ezincinci, kunye nokusebenza okuphezulu.