Isicoci seplasma sePVA TePlasma IoN 200

I-IoN 200, eyaziswa yi-PVA TePla, yinkqubo yeplasma ye-RF (Radio Frequency) eyenzelwe ngokukodwa ukuguqulwa komphezulu, ukucoca, kunye nokusetyenziswa kothuli. Amandla ayo aphambili akwimo yayo yokuguquguquka engaqhelekanga: ayihlangabezani nje neemfuno zeelabhoratri ze-R&D zokuhlola inkqubo ngokuchanekileyo kodwa ikwadityaniswa ngokungenamthungo kwiindawo zemveliso yobuninzi, ivumela ukucutshungulwa kwezinto ezinkulu kunye nokuxhasa ukuveliswa komthamo ophezulu.

**Umgaqo Wokusebenza**

I-IoN 200 isebenzisa iteknoloji ye-RF plasma ukuvusa iigesi ngaphakathi kwindawo engenamoya, ngaloo ndlela ivelisa i-plasma. Ii-plasma radicals ezinamandla aphezulu ziqala zombini ii-bombardment zomzimba kunye neempendulo zeekhemikhali kumphezulu wezinto, ngaloo ndlela zenza imisebenzi yenkqubo efana nokucoca, ukwenza isebenze, okanye ukukrola. Ngaphezu koko, i-PVA TePla inikezela ngemodyuli yeteknoloji ye-microwave plasma yokuzikhethela; le teknoloji isebenzisa amandla e-electromagnetic wave ukuvusa iigesi kwaye ivelise ii-reactive radicals. Oku kuqinisekisa inkqubo yokucoca esebenza kakuhle, efanayo, kwaye i-isotropic, ngelixa ithintela ngokufanelekileyo umonakalo obangelwa yi-ion kunye nokuqokelelwa kwe-electrostatic charge.

**Izakhono Eziphambili**

I-IoN 200 inezakhono ezibanzi zenkqubo:

**Ukucoca Umphezulu:** Ukususwa kweentsalela ezingaguqukiyo, ezifana nezinto ezingcolisayo eziphilayo kunye nee-oxide.

**Ukusebenza Komphezulu:** Ukwaziswa kwamaqela asebenzayo e-polar ukuphucula ukufuma komphezulu kunye nokunamathela, ngaloo ndlela kulungiswa umphezulu kwiinkqubo ezilandelayo ezifana nokukhupha kunye nokubopha.

**Ukulahla inkunkuma/Ukuhla:** Kwiinkqubo zokwenziwa kwe-wafer kunye nokupakisha, oku kubandakanya ukususwa ngokuchanekileyo kwe-photoresist—okanye ukucocwa kweentsalela ezisele emva kokugrumba iipateni (oko kukuthi, i-descum)—ngenkqubo esebenza kakuhle kakhulu yokuhlanjwa kwenkunkuma ye-photoresist; oku kuqinisekisa ukuba akukho monakalo kwaye ngokuchanekileyo kusetyenzwa.

**Iingenelo kunye neempawu**

Itheyibhile engezantsi igxininisa iingenelo zobugcisa ezibalaseleyo kunye neempawu zoyilo ze-IoN 200 kwiinkalo ezahlukeneyo:

**Ubukhulu** | **Inkcazo eneenkcukacha**

**Ukuguquguquka Okumangalisayo** | Iyakwazi ukucubungula ii-wafers ukuya kuthi ga kwi-200 mm ububanzi, kunye neentlobo ngeentlobo ze-substrates ezinkulu. Le nkqubo inikezela ngeendlela ezahlukeneyo zokubonelela ngombane ze-RF kwaye ixhasa uqwalaselo lwee-chambers kunye nee-electrodes ngobukhulu obahlukeneyo ukuze zihambelane ngokuchanekileyo neemfuno ezithile zenkqubo kunye neziphumo zemveliso; ngokukodwa, ukhetho olukhulu lwe-chamber lunomthamo ofikelela kwi-1,200 yeelitha, nto leyo ebonelela ngendawo eyaneleyo yokwandiswa kwenkqubo kwixesha elizayo kunye nokuphuculwa kwayo.

**Ukusebenza kweNkqubo eQolileyo** | Ukusebenzisa itekhnoloji ye-RF plasma—kunye nokubonelela ngemodyuli ye-microwave plasma yokuzikhethela—le nkqubo ibonisa ukuguquguquka okubanzi kwenkqubo. Injongo yayo ephambili kukuqinisekisa iziphumo zenkqubo ezizinzileyo nezihambelanayo kwi-substrates ezifikelela kwi-200 mm. Umzekelo, ngexesha lokususwa kwe-photoresist, inkqubo ifikelela kumanqanaba okususwa abalaseleyo kunye nokufana.

**Ucoceko Oluphezulu Nobuhlobo Kwindalo Esingqongileyo:** Le nkqubo isebenzisa inkqubo yokucoca "eyomileyo"—eyahluke kakhulu kwiindlela zemveli zokucoca iikhemikhali ezimanzi—ngaloo ndlela isusa isidingo sokuphatha inkunkuma yolwelo enobungozi kwaye izimisa njengeteknoloji "eluhlaza" enobuhlobo nokusingqongileyo.

**Iteknoloji Ephambili kunye noMgangatho Othembekileyo:** Isebenzisa ubuchule obungaphezulu kweminyaka engama-25 kwicandelo lokucubungula i-plasma, i-PVA TePla idume kweli shishini ngobomi bezixhobo obungaphezulu kweminyaka engama-20—ubungqina bomgangatho wayo ogqwesileyo kunye nokuthembeka kwayo. Itekhnoloji yayo ekhethekileyo ye-microwave plasma ivumela ukucocwa okupheleleyo nokungenakonakala kweesampuli.

**Ukusebenza Okulula Kubasebenzisi Nokulandelela Idatha:** Uyilo lwenkqubo lugxininisa kakhulu kulawulo lwenkqubo oluguquguqukayo, iinkqubo ze-alamu ezingaphumeleliyo, kunye nesoftware yokufumana idatha. Oku akuboneleli abasebenzisi ngamava okusebenza aphucukileyo naqondakalayo kuphela kodwa kuqinisekisa ukulandelelwa kwenkqubo, ngaloo ndlela kuhlangatyezwana neemfuno ezingqongqo zoshishino zokulawula umgangatho. **Iinkcukacha zobugcisa**

Nangona iinkcukacha ezithile zehardware zinokwahluka ngokuxhomekeke kulwakhiwo lokwenyani, ezi mpawu ziphambili zilandelayo ze-IoN 200 zidweliswe ngokusekelwe kulwazi olufumaneka esidlangalaleni:

**Ipharamitha** | **Iinkcukacha**

**Uhlobo lweSixhobo** | Inkqubo yokuCwangcisa iPlasma yeRF (iRadio Frequency) (Inkqubo yePlasma yeMicrowave ekhethiweyo iyafumaneka)

**Ubungakanani beWafer/iSubstrate** | Ixhasa ukuya kuthi ga kwi-200 mm (ii-intshi ezi-8)

**Imo Yokucubungula** | Ixhasa zombini iindlela zokucubungula iBatch kunye neendlela zokucubungula ezine-single-wafer/substrate ukuze kuhlangatyezwane neemfuno ezahlukeneyo zenkqubo malunga nokufana kunye nokusebenza kakuhle kweendleko

**Uqwalaselo lweGumbi** | Uyilo lweModular, oluhambelana neentlobo ezahlukeneyo zee-electrodes kunye nezakhiwo zegumbi

**Izicelo eziphambili** | Ukususwa kwe-Photoresist (Ukulahla i-Ashes/Ukukrazula), Ukususwa kwezinto ezingcolisayo ze-Organic/Inorganic, Ukusebenza komphezulu

**Iigesi zeNkqubo** | Ioksijini (O₂), iArgon (Ar), iigesi ezineFluorine, njl.

**Amandla eRF** | Ibonelela ngeendlela ezahlukeneyo zokumisela amandla kunye neefrikhwensi ukuze zilungele iimfuno ezithile zenkqubo (umz., 13.56 MHz okanye 2.45 GHz [iMicrowave])

**Iindawo zokufaka isicelo**

Ngenxa yokusebenza kwayo okugqwesileyo kunye nokuguquguquka, i-IoN 200 idlala indima ebalulekileyo kumacandelo ahlukeneyo okuvelisa akumgangatho ophezulu.

**Ukwenziwa kweeSemiconductor (Isiphelo sangaphambili):** Isetyenziswa ngexesha lenkqubo yokwenza i-wafer kwi-photoresist ashing/stripping; ukususa i-photoresist emva kweenkqubo ezifana nokufakelwa kwe-ion; kunye nokususa ungcoliseko lwezinto eziphilayo nezingaphiliyo kwiindawo ze-wafer.

**Ukupakisha Okuphambili (Umva):** Isetyenziselwa ukuvula nokucoca i-substrate kunye neendawo ze-chip ngaphambi kokuba i-wire bonding, i-die attach, kunye ne-underfilling, ngaloo ndlela iqinisekisa ukunamathela kunye neziphumo zokuzalisa ezifanelekileyo.

**IiMEMS kunye neeOptoelectronic Devices:** Zisetyenziswa ekwenzeni iiMEMS kunye neeOptoelectronic components ukususa iileya ezibi okanye iintsalela zePhotoresist—umzekelo, ukususwa kweSU-8 photoresist.

**Ezinye iiShishini:** Imigaqo yayo esisiseko yetekhnoloji ikwasebenza nakwiinkalo ezifana nesayensi yobomi, iteknoloji yezonyango, izixhobo ze-elektroniki zeemoto, kunye neenqwelo-moya, apho isebenza khona ukuphucula ukuthembeka nokusebenza kwemveliso.

**Isishwankathelo**

Ngamafutshane, i-PVA TePla IoN 200 yinkqubo enamandla yokucubungula i-plasma enika ukuguquguquka okugqwesileyo kwenkqubo. Inika ukusebenza okugqwesileyo ekucoceni okusemgangathweni ophezulu, ukususa i-photoresist, kunye nokusebenza komphezulu, okwenza ukuba ifaneleke kakhulu kwi-R&D yelabhoratri kunye neendawo zemveliso eziphakathi ezibandakanya ii-substrates ezingama-200mm okanye ezincinci. Uyilo lwayo oluguquguqukayo lwemodyuli kunye nokusebenza kwayo okuqinileyo kuyimisela njengesisombululo esithembekileyo kwicandelo le-semiconductor, microelectronics, kunye necandelo lokupakisha eliphambili.