I-KAIJO FB-x26 ngumatshini wokubopha intambo we-thermo-ultrasonic osebenza kwindawo ebanzi, ochanekileyo ngokupheleleyo ovela kwi-KAIJO yaseJapan. Yenzelwe ngokukodwa iimodyuli ezinamandla aphezulu, izixhobo ze-elektroniki zeemoto, ii-IC ezinkulu, kunye nokusetyenziswa kwezixhobo zokubopha intambo ezikude. Iingenelo zayo eziphambili ziquka indawo yokubopha i-Y-axis enkulu kakhulu engama-95mm, ingalo ye-Z elula, uxinzelelo oluphantsi, kunye nozinzo olude. Ingafunyanwa ngokuthe ngqo kumatshini wokubopha i-wafer we-FB-x26 BUMP, okwenza ukuba ibe sisixhobo esiphambili sombane kunye nokupakisha okuphambili.
I. Ukubekwa Kwendawo kunye Nezicelo Eziphambili
Indawo: Umatshini wokubopha ibhola we-thermo-ultrasonic ozenzekelayo ngokupheleleyo, onendawo ebanzi, i-arc ende, imodeli ezinikeleyo echanekileyo kakhulu.
Izicelo eziqhelekileyo:
Ii-Power Semiconductors: ii-IGBTs, ii-MOSFETs, iimodyuli zamandla ze-SiC/GaN (ii-leads ezinde, isakhelo esikhulu).
Izixhobo ze-elektroniki zeemoto: Ii-MCU zeemoto, ii-IC zolawulo lwamandla, ukupakishwa kwezibane/isensa zeemoto.
Ii-IC ezinkulu: Imemori, ii-SoC, ii-ASIC ezininzi (ububanzi befreyimu ukuya kuthi ga kwi-105mm).
Ukupakisha Okuphambili: I-Stud Bump, Ukubeka iitshiphusi ezininzi, i-Long-Distance Arc (ukuya kuthi ga kwi-12mm).
Iintambo ezihambelanayo: Ucingo lwegolide (Φ15–30μm), Ucingo lweCopper (Φ20–30μm), Ucingo lweSilver alloy (ukhetho).
II. Iinkcukacha zeCore (Uqwalaselo oluPhambili luka-2026)
Indawo yokubopha: 56mm (X) × 95mm (Y); Ububanzi befreyimu obuphezulu yi-105mm.
Indawo Yokusebenza: 295mm × 105mm (kwii-substrates/iitreyi ezinkulu).
Isantya sokuBonda: Isiqhelo yi-0.045–0.055 sec/line (1090–1333 imigca/min).
Ukuphinda-phinda: ±2.5μm (3σ); Ubuncinci besithuba sephedi yi-35μm.
Ubude boMgca/Ukuphakama kwe-Arc: Ubude bomgca obuphezulu yi-12mm; Ubude be-Arc yi-0.5–5mm (iyalawuleka). Iindlela zokuwelda: Ukubopha ibhola nge-thermo-sonic/ukubopha i-wedge; i-dual-frequency ultrasonic (esemgangathweni).
Ubukhulu bomzimba (W×D×H): Malunga ne-1200×800×1600mm; Ubunzima malunga ne-850kg.
III. Ulwakhiwo kunye neeTekhnoloji eziphambili
1. Intloko yokuwelda ekhaphukhaphu enobunzima obuphezulu (indawo yokuthengisa ephambili)
Ingalo yokujika yezinto ezidityanisiweyo: Ukuqina okuphezulu + ukungabi namandla okubamba, ukungcangcazela okuncinci ngexesha lokuhamba ngesantya esiphezulu, ukuphuculwa kwe-40% ekuzinzeni kwe-arc ende.
I-resonator ye-Type 1701 ultra-miniature: Imveliso ezinzileyo, ukushukuma okuphantsi kobushushu, ehambelana neengcingo ze-copper/silver alloy, i-welding enoxinzelelo oluphantsi (≤1.5N), ekhusela iitships ezincinci/ii-substrates ezibuthathaka.
Ukufunyanwa koqhagamshelwano olukhawulezayo: Ingxelo yoxinzelelo ngexesha langempela, ukuchaneka kolawulo loxinzelelo lokubopha ± 0.1N, kunciphisa umngcipheko wokuqhekeka kweetshiphusi.
2. α- Inkqubo yokubona ngamehlo
I-algorithm yokuqaphela yesizukulwana esilandelayo: Ayibonakalisi mbala, umahluko ochasene nombala, ukuchaneka kokuqaphela ±1μm, izinga lokuqaphela i-substrate engcolileyo/engaphantsi ≥99.9%.
Ukufunda ngeetemplate ezininzi: Ixhasa iiphini ezintsonkothileyo, ii-pads ezimile ngendlela engaqhelekanga, kunye nee-arrays ezixineneyo, ilungisa ngokuzenzekelayo i-offset/rotation.
3. Ulandelelwano lweBond yeNyathelo (Ukudibanisa iNyathelo ngeNyathelo okuBonisiweyo): Ukuboniswa kweeparameter zenkqubo epheleleyo: Amandla e-ultrasonic ahlengahlengiswayo ahlukaniswe ngokwezigaba, uxinzelelo, ixesha, kunye nobushushu ukuze kulawulwe ngokuchanekileyo ububanzi bebhola, ububanzi be-wedge, kunye nesimo se-wire arc.
Ilayibrari yenkqubo ye-arc ende/ephakamileyo ezinikeleyo: Ukubopha ucingo oluzinzileyo kumgama omde kakhulu we-10–12mm, ngaphandle kokudilika/ukuqhekeka kwentambo.
4. Ukwenziwa kwezinto ngokuzenzekelayo kunye noQhagamshelo: Ukulayisha nokukhupha izinto ngokuzenzekelayo ngokupheleleyo: iibhokisi zezinto ezingama-25 × 2, ukuthungwa kweentambo ngokuzenzekelayo, ukucoca iiphini ngokuzenzekelayo, kunye nokucoca ii-capillary ngokuzenzekelayo.
Iimpawu ezisemgangathweni ze-Industry 4.0: I-SECS/GEM, i-KISS (iNkqubo yoLawulo lweZixhobo ze-KAIJO), ukujonga ngexesha langempela, ukulandelelwa, kunye nokuxilongwa okukude.
I-Windows 10 touch interface: Isikrini esikhulu se-intshi ezili-15, ukusebenza okusekwe kwi icon, ukukhunjulwa kweparameter ngokucofa kanye, izibalo ze-yield, kunye nee-alamu ezingaqhelekanga.
IV. Uthotho lwe-FB-x26 BUMP Derivative
I-FB-x26 BUMP1: I-wafer bumping eyi-intshi ezi-6 ezenzekelayo ngokupheleleyo (i-Stud Bump), ukulayisha nokukhupha izinto ngokuzenzekelayo, ukuphakama kwe-bump yi-5–50μm, ukuchaneka ±1μm.
I-FB-x26 BUMP2/BUMP3: I-wafer bumping eyi-intshi ezi-8 ezizenzekelayo, ehambelana nokupakishwa okuphucukileyo (i-WLCSP, i-Fan-out).
V. Iingenelo zoThelekiso (ngokuthelekiswa noMatshini oPhambili weNjongo Jikelele FB-e20N)
Indawo yokuSoldering: x26 95mm (Y) vs e20N 80mm (Y) → Ikhethwa kakhulu kwiifreyimu ezinkulu/ii-arcs ezinde.
Intloko yokuSoldering: x26 ukuqina okuphezulu kunye nokukhanya + impembelelo ephantsi xa kuthelekiswa nokuqina okuqhelekileyo kwe-e20N → Izinzile ngakumbi kwiitships ezincinci/iimodyuli zamandla.
Ubude beNtambo: x26 12mm vs e20N 8mm → Eyona ndlela ikhethekileyo yokubopha intambo kumgama omde.
Ukuchaneka: x26 ±2.5μm vs e20N ±3.0μm → Isivuno esiphezulu.
Isantya: x26 icotha kancinci (ifanelekile kwii-arcs ezinde) xa ithelekiswa ne-e20N ngokukhawuleza (kwimveliso yobunzima obufutshane).
VI. Isishwankathelo kunye neengcebiso zokukhetha
Amaxabiso angundoqo: Indawo ebanzi, i-arc ende, impembelelo ephantsi, ukuchaneka okuphezulu, ukusombulula iindawo ezibuhlungu zokubopha ucingo kwiimodyuli zamandla/ii-IC ezinkulu, isivuno ≥99.5%.
Iingcebiso zokukhetha:
Iimodyuli zamandla, izixhobo ze-elektroniki zeemoto, ukubopha ucingo olude → FB-x26
I-wafer egobileyo eyi-intshi ezi-6–8 → FB-x26 BUMP1/2/3
Ukuveliswa kobuninzi be-short-arc ngesantya esiphezulu (ii-LED/izixhobo ezifihlakeleyo) → Khetha i-FB-e20N












